Practical Low Power Digital Vlsi Design Pdf Download

Practical Low Power Digital VLSI Design PDF Download

If you are interested in learning about the techniques and challenges of designing low power digital VLSI circuits, you may want to download the PDF version of the book Practical Low Power Digital VLSI Design by Gary Yeap. This book emphasizes the optimization and trade-off techniques that involve power dissipation, in the hope that the readers are better prepared the next time they are presented with a low power design problem. The book highlights the basic principles, methodologies and techniques that are common to most CMOS digital designs. The advantages and disadvantages of a particular low power technique are discussed. Besides the classical area-performance trade-off, the impact to design cycle time, complexity, risk, testability and reusability are discussed. The wide impacts to all aspects of design are what make low power problems challenging and interesting.

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The book covers a wide range of design abstraction levels spanning circuit, logic, architecture and system. Substantial basic knowledge is provided for qualitative and quantitative analysis at the different design abstraction levels. Low power techniques are presented at the circuit, logic, architecture and system levels. Special techniques that are specific to some key areas of digital chip design are discussed as well as some of the low power techniques that are just appearing on the horizon. The book also provides examples and design techniques that have been applied to production scale designs or laboratory settings.

The book was originally published by Kluwer Academic Publishers in 1998 and has been reprinted by Springer Science+Business Media in 2014. The book has 212 pages and contains eight chapters. The book is intended for VLSI design engineers and students who have a fundamental knowledge of CMOS digital design. The book is also suitable for researchers and practitioners who want to learn more about the practical aspects of low power digital VLSI design.

If you want to download the PDF version of the book, you can find it on various online platforms that offer free or paid access to academic books and papers. One such platform is [Vdoc], which allows you to download the PDF file for free after registering an account. Another platform is [SpringerLink], which offers access to the eBook version of the book for a fee or through a subscription. You can also find the book on [Google Books], which lets you preview some pages of the book before buying it.

We hope you find this book useful and informative for your learning and research purposes. If you have any questions or feedback about the book, please feel free to contact the author at gary.yeap@motorola.com. Low Power Design Challenges and Opportunities

As the demand for portable and wireless devices increases, the need for low power design becomes more critical. Low power design can extend the battery life, reduce the heat dissipation, improve the reliability and lower the cost of the devices. However, low power design also poses many challenges and trade-offs for the designers. Some of the challenges and opportunities of low power design are discussed below.

Technology Scaling and Power Consumption

One of the main factors that affect the power consumption of a digital circuit is the technology scaling. Technology scaling refers to the process of shrinking the feature size of the transistors and interconnects in a chip, which allows more devices to be integrated on a single die. Technology scaling can improve the performance, density and functionality of the chip, but it also increases the power density and leakage current. The power density is the ratio of power dissipation to chip area, which determines the thermal management and cooling requirements of the chip. The leakage current is the current that flows through a transistor when it is supposed to be off, which contributes to the static power dissipation of the chip.

The relationship between technology scaling and power consumption can be illustrated by using a simple model of a CMOS inverter. A CMOS inverter consists of a PMOS transistor and an NMOS transistor connected in series between a supply voltage VDD and ground. The output voltage Vout is taken from the common node of the two transistors. The input voltage Vin controls the switching behavior of the transistors. When Vin is low, the PMOS transistor is on and the NMOS transistor is off, so Vout is high. When Vin is high, the PMOS transistor is off and the NMOS transistor is on, so Vout is low. When Vin is in between, both transistors are partially on, so Vout is in between.

The power consumption of a CMOS inverter can be divided into two components: dynamic power and static power. Dynamic power is the power dissipated during switching transitions, which depends on the switching frequency, load capacitance, supply voltage and activity factor. Static power is the power dissipated when there is no switching activity, which depends on the leakage current, supply voltage and threshold voltage. The total power consumption PTOT can be expressed as:

$$P_TOT = P_DYN + P_STAT$$ The dynamic power PDYN can be approximated by:

$$P_DYN = \alpha C_L V_DD^2 f$$ where α is the activity factor (the probability that the output switches in one clock cycle), CL is the load capacitance (the total capacitance seen at the output node), VDD is the supply voltage and f is the switching frequency.

The static power PSTAT can be approximated by:

$$P_STAT = I_LEAK V_DD$$ where ILEAK is the leakage current (the sum of subthreshold leakage, gate leakage and junction leakage currents).

The effect of technology scaling on power consumption can be analyzed by using some typical values for different technology nodes. Table 1 shows some parameters for 180 nm, 90 nm, 45 nm and 22 nm CMOS technologies. The values are based on [ITRS] predictions and [PTM] models.

Technology node Feature size (nm) Supply voltage (V) Threshold voltage (V) Leakage current (nA/um) Load capacitance (fF/um) --------------- ----------------- ------------------ --------------------- ----------------------- ----------------------- 180 nm 180 1.8 0.4 0.01 1 90 nm 90 1.2 0.3 1 0.5 45 nm 45 0.9 0.2 10 0.25 22 nm 22 0.7 0.1 100 0.125 Table 1: Parameters for different CMOS technology nodes Assuming a switching frequency of 1 GHz, an activity factor of 0.1 and a gate width of 1 μm, the dynamic power and static power of a CMOS inverter for each technology node can be calculated as shown in Table 2.

Technology node Dynamic power (nW) Static power (nW) Total power (nW) --------------- ------------------ ----------------- ---------------- 180 nm 324 0.018 324.018 90 nm 108 1.2 109.2 45 nm 40.5 9 49.5 22 nm 17.5 70 87.5 Table 2: Power consumption of a CMOS inverter for different CMOS technology nodes From Table 2, it can be seen that the dynamic power decreases as the technology node scales down, due to the reduction of supply voltage and load capacitance. However, the static power increases exponentially as the technology node scales down, due to the increase of leakage current and the decrease of threshold voltage. As a result, the total power consumption does not decrease proportionally with the technology scaling. In fact, for the 22 nm technology node, the static power dominates the total power consumption, which means that the chip consumes more power when it is idle than when it is active.

This trend poses a serious challenge for low power design, as it limits the benefits of technology scaling and requires more aggressive techniques to reduce both dynamic and static power dissipation. On the other hand, this trend also creates new opportunities for low power design, as it motivates the exploration of novel device structures, circuit architectures and system-level solutions that can overcome the limitations of conventional CMOS technologies. Low Power Design Techniques and Trade-offs

In order to achieve low power design, various techniques and trade-offs can be applied at different levels of design abstraction, from device to system. Some of the common low power design techniques and trade-offs are discussed below.

Device Level

At the device level, the main technique for reducing power consumption is to reduce the supply voltage VDD, which has a quadratic effect on the dynamic power and a linear effect on the static power. However, reducing the supply voltage also reduces the performance, as it increases the delay of the transistors and reduces the noise margin. Therefore, there is a trade-off between power and performance at the device level.

Another technique for reducing power consumption at the device level is to use multiple threshold voltages VT for different transistors, depending on their criticalit